Description of mathematical model for the fringe fields in photo detectors based on microchannel plates (MCP) is given. Normally the fringe field calculation requires complex and time-consuming computations using three-dimensional commercial codes. The original semi-analytic model suggested in the paper. This model is based on the mapping procedure for pre-calculated universal fringe field patterns for channels with specific values of the diameter and applied voltages. A fast algorithm can be used for metal channels with metal deposition on the edge and without it. Comparisons of numerical and experimental data are given. The dependencies of major device parameters vs. of applied voltage, pore size, and magnetic field magnitude have been studied.
Published in | American Journal of Modern Physics (Volume 7, Issue 1) |
DOI | 10.11648/j.ajmp.20180701.14 |
Page(s) | 31-33 |
Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
Copyright |
Copyright © The Author(s), 2017. Published by Science Publishing Group |
Photo Detector, Microchannel Plate, Numerical Simulation
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APA Style
Valentin Ivanov, Igor Turchanovsky. (2017). Influence of the Fringe Fields in Microchannel Amplifiers Design. American Journal of Modern Physics, 7(1), 31-33. https://doi.org/10.11648/j.ajmp.20180701.14
ACS Style
Valentin Ivanov; Igor Turchanovsky. Influence of the Fringe Fields in Microchannel Amplifiers Design. Am. J. Mod. Phys. 2017, 7(1), 31-33. doi: 10.11648/j.ajmp.20180701.14
AMA Style
Valentin Ivanov, Igor Turchanovsky. Influence of the Fringe Fields in Microchannel Amplifiers Design. Am J Mod Phys. 2017;7(1):31-33. doi: 10.11648/j.ajmp.20180701.14
@article{10.11648/j.ajmp.20180701.14, author = {Valentin Ivanov and Igor Turchanovsky}, title = {Influence of the Fringe Fields in Microchannel Amplifiers Design}, journal = {American Journal of Modern Physics}, volume = {7}, number = {1}, pages = {31-33}, doi = {10.11648/j.ajmp.20180701.14}, url = {https://doi.org/10.11648/j.ajmp.20180701.14}, eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20180701.14}, abstract = {Description of mathematical model for the fringe fields in photo detectors based on microchannel plates (MCP) is given. Normally the fringe field calculation requires complex and time-consuming computations using three-dimensional commercial codes. The original semi-analytic model suggested in the paper. This model is based on the mapping procedure for pre-calculated universal fringe field patterns for channels with specific values of the diameter and applied voltages. A fast algorithm can be used for metal channels with metal deposition on the edge and without it. Comparisons of numerical and experimental data are given. The dependencies of major device parameters vs. of applied voltage, pore size, and magnetic field magnitude have been studied.}, year = {2017} }
TY - JOUR T1 - Influence of the Fringe Fields in Microchannel Amplifiers Design AU - Valentin Ivanov AU - Igor Turchanovsky Y1 - 2017/12/14 PY - 2017 N1 - https://doi.org/10.11648/j.ajmp.20180701.14 DO - 10.11648/j.ajmp.20180701.14 T2 - American Journal of Modern Physics JF - American Journal of Modern Physics JO - American Journal of Modern Physics SP - 31 EP - 33 PB - Science Publishing Group SN - 2326-8891 UR - https://doi.org/10.11648/j.ajmp.20180701.14 AB - Description of mathematical model for the fringe fields in photo detectors based on microchannel plates (MCP) is given. Normally the fringe field calculation requires complex and time-consuming computations using three-dimensional commercial codes. The original semi-analytic model suggested in the paper. This model is based on the mapping procedure for pre-calculated universal fringe field patterns for channels with specific values of the diameter and applied voltages. A fast algorithm can be used for metal channels with metal deposition on the edge and without it. Comparisons of numerical and experimental data are given. The dependencies of major device parameters vs. of applied voltage, pore size, and magnetic field magnitude have been studied. VL - 7 IS - 1 ER -